Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA3N100D2HV

IXTA3N100D2HV

For Reference Only

Part Number IXTA3N100D2HV
PNEDA Part # IXTA3N100D2HV
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,370
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA3N100D2HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA3N100D2HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA3N100D2HV Datasheet
  • where to find IXTA3N100D2HV
  • IXYS

  • IXYS IXTA3N100D2HV
  • IXTA3N100D2HV PDF Datasheet
  • IXTA3N100D2HV Stock

  • IXTA3N100D2HV Pinout
  • Datasheet IXTA3N100D2HV
  • IXTA3N100D2HV Supplier

  • IXYS Distributor
  • IXTA3N100D2HV Price
  • IXTA3N100D2HV Distributor

IXTA3N100D2HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs6Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37.5nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1020pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263HV
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SI7139DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

146nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4230pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRFR2407PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

HUF75345P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

275nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

325W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRF7406TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF9Z24PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MT41K128M16JT-125 XIT:K

MT41K128M16JT-125 XIT:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

SSQ 2

SSQ 2

Bel Fuse

FUSE BOARD MNT 2A 125VAC/VDC SMD

74279221111

74279221111

Wurth Electronics

FERRITE BEAD 110 OHM 1206 1LN

IHLP2525CZERR22M01

IHLP2525CZERR22M01

Vishay Dale

FIXED IND 220NH 23A 2.8 MOHM SMD

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

LTC3642EMS8E-5#PBF

LTC3642EMS8E-5#PBF

Linear Technology/Analog Devices

IC REG BUCK 5V 50MA 8MSOP

LTC3882EUJ#PBF

LTC3882EUJ#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK PMBUS 40QFN

TC4427AEOA713

TC4427AEOA713

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

BAS516,115

BAS516,115

Nexperia

DIODE GEN PURP 100V 250MA SOD523

DS2781E+T&R

DS2781E+T&R

Maxim Integrated

IC FUEL GAUGE BATT 8TSSOP