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IXTA80N12T2

IXTA80N12T2

For Reference Only

Part Number IXTA80N12T2
PNEDA Part # IXTA80N12T2
Description MOSFET N-CH 120V 80A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA80N12T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA80N12T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA80N12T2, IXTA80N12T2 Datasheet (Total Pages: 6, Size: 197.94 KB)
PDFIXTA80N12T2 Datasheet Cover
IXTA80N12T2 Datasheet Page 2 IXTA80N12T2 Datasheet Page 3 IXTA80N12T2 Datasheet Page 4 IXTA80N12T2 Datasheet Page 5 IXTA80N12T2 Datasheet Page 6

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IXTA80N12T2 Specifications

ManufacturerIXYS
SeriesTrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4740pF @ 25V
FET Feature-
Power Dissipation (Max)325W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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