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IXTA8N50P

IXTA8N50P

For Reference Only

Part Number IXTA8N50P
PNEDA Part # IXTA8N50P
Description MOSFET N-CH 500V 8A D2-PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,402
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA8N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA8N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA8N50P, IXTA8N50P Datasheet (Total Pages: 5, Size: 811.23 KB)
PDFIXTA8N50P Datasheet Cover
IXTA8N50P Datasheet Page 2 IXTA8N50P Datasheet Page 3 IXTA8N50P Datasheet Page 4 IXTA8N50P Datasheet Page 5

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IXTA8N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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