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IXTC200N10T

IXTC200N10T

For Reference Only

Part Number IXTC200N10T
PNEDA Part # IXTC200N10T
Description MOSFET N-CH 100V 101A ISOPLUS220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTC200N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTC200N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTC200N10T, IXTC200N10T Datasheet (Total Pages: 5, Size: 185.6 KB)
PDFIXTC200N10T Datasheet Cover
IXTC200N10T Datasheet Page 2 IXTC200N10T Datasheet Page 3 IXTC200N10T Datasheet Page 4 IXTC200N10T Datasheet Page 5

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IXTC200N10T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9400pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS220™
Package / CaseISOPLUS220™

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