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IXTD1R4N60P 11

IXTD1R4N60P 11

For Reference Only

Part Number IXTD1R4N60P 11
PNEDA Part # IXTD1R4N60P-11
Description MOSFET N-CH 600V
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTD1R4N60P 11 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTD1R4N60P 11
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTD1R4N60P 11 Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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