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IXTD2N60P-1J

IXTD2N60P-1J

For Reference Only

Part Number IXTD2N60P-1J
PNEDA Part # IXTD2N60P-1J
Description MOSFET N-CH 600
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTD2N60P-1J Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTD2N60P-1J
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTD2N60P-1J Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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