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IXTH06N220P3HV

IXTH06N220P3HV

For Reference Only

Part Number IXTH06N220P3HV
PNEDA Part # IXTH06N220P3HV
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH06N220P3HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH06N220P3HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTH06N220P3HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2200V
Current - Continuous Drain (Id) @ 25°C600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 25V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247HV
Package / CaseTO-247-3 Variant

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