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IXTH102N20T

IXTH102N20T

For Reference Only

Part Number IXTH102N20T
PNEDA Part # IXTH102N20T
Description MOSFET N-CH 200V 102A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH102N20T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH102N20T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH102N20T, IXTH102N20T Datasheet (Total Pages: 5, Size: 133.47 KB)
PDFIXTH102N20T Datasheet Cover
IXTH102N20T Datasheet Page 2 IXTH102N20T Datasheet Page 3 IXTH102N20T Datasheet Page 4 IXTH102N20T Datasheet Page 5

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IXTH102N20T Specifications

ManufacturerIXYS
SeriesTrenchHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)750W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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