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IXTH120P065T

IXTH120P065T

For Reference Only

Part Number IXTH120P065T
PNEDA Part # IXTH120P065T
Description MOSFET P-CH 65V 120A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH120P065T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH120P065T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH120P065T, IXTH120P065T Datasheet (Total Pages: 6, Size: 189.75 KB)
PDFIXTH120P065T Datasheet Cover
IXTH120P065T Datasheet Page 2 IXTH120P065T Datasheet Page 3 IXTH120P065T Datasheet Page 4 IXTH120P065T Datasheet Page 5 IXTH120P065T Datasheet Page 6

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IXTH120P065T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)65V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds13200pF @ 25V
FET Feature-
Power Dissipation (Max)298W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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