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IXTH21N50

IXTH21N50

For Reference Only

Part Number IXTH21N50
PNEDA Part # IXTH21N50
Description MOSFET N-CH 500V 21A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,540
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH21N50 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH21N50
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH21N50, IXTH21N50 Datasheet (Total Pages: 4, Size: 615.99 KB)
PDFIXTH24N50 Datasheet Cover
IXTH24N50 Datasheet Page 2 IXTH24N50 Datasheet Page 3 IXTH24N50 Datasheet Page 4

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IXTH21N50 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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