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IXTH30N50

IXTH30N50

For Reference Only

Part Number IXTH30N50
PNEDA Part # IXTH30N50
Description MOSFET N-CH 500V 30A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,118
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH30N50 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH30N50
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH30N50, IXTH30N50 Datasheet (Total Pages: 2, Size: 59.23 KB)
PDFIXTH30N50 Datasheet Cover
IXTH30N50 Datasheet Page 2

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IXTH30N50 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs227nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5680pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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