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IXTH30N60L2

IXTH30N60L2

For Reference Only

Part Number IXTH30N60L2
PNEDA Part # IXTH30N60L2
Description MOSFET N-CH 600V 30A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH30N60L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH30N60L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH30N60L2, IXTH30N60L2 Datasheet (Total Pages: 5, Size: 141.58 KB)
PDFIXTQ30N60L2 Datasheet Cover
IXTQ30N60L2 Datasheet Page 2 IXTQ30N60L2 Datasheet Page 3 IXTQ30N60L2 Datasheet Page 4 IXTQ30N60L2 Datasheet Page 5

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IXTH30N60L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs335nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10700pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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