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IXTH67N10

IXTH67N10

For Reference Only

Part Number IXTH67N10
PNEDA Part # IXTH67N10
Description MOSFET N-CH 100V 67A TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH67N10 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH67N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH67N10, IXTH67N10 Datasheet (Total Pages: 4, Size: 1,183.31 KB)
PDFIXTM67N10 Datasheet Cover
IXTM67N10 Datasheet Page 2 IXTM67N10 Datasheet Page 3 IXTM67N10 Datasheet Page 4

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IXTH67N10 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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