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IXTH6N80A

IXTH6N80A

For Reference Only

Part Number IXTH6N80A
PNEDA Part # IXTH6N80A
Description MOSFET N-CH 800V 6A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,842
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH6N80A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH6N80A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH6N80A, IXTH6N80A Datasheet (Total Pages: 4, Size: 102.81 KB)
PDFIXTH6N80A Datasheet Cover
IXTH6N80A Datasheet Page 2 IXTH6N80A Datasheet Page 3 IXTH6N80A Datasheet Page 4

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IXTH6N80A Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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