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IXTI12N50P

IXTI12N50P

For Reference Only

Part Number IXTI12N50P
PNEDA Part # IXTI12N50P
Description MOSFET N-CH 500V 12A I2-PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,442
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTI12N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTI12N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTI12N50P, IXTI12N50P Datasheet (Total Pages: 5, Size: 159.09 KB)
PDFIXTI12N50P Datasheet Cover
IXTI12N50P Datasheet Page 2 IXTI12N50P Datasheet Page 3 IXTI12N50P Datasheet Page 4 IXTI12N50P Datasheet Page 5

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IXTI12N50P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1830pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262 (I2PAK)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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