Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTJ6N150

IXTJ6N150

For Reference Only

Part Number IXTJ6N150
PNEDA Part # IXTJ6N150
Description MOSFET N-CH 1500V 3A ISOTO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,996
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTJ6N150 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTJ6N150
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTJ6N150 Datasheet
  • where to find IXTJ6N150
  • IXYS

  • IXYS IXTJ6N150
  • IXTJ6N150 PDF Datasheet
  • IXTJ6N150 Stock

  • IXTJ6N150 Pinout
  • Datasheet IXTJ6N150
  • IXTJ6N150 Supplier

  • IXYS Distributor
  • IXTJ6N150 Price
  • IXTJ6N150 Distributor

IXTJ6N150 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1500V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.85Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2230pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

EFC4615R-TR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

31mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EFCP1515-4CC-037

Package / Case

4-XBGA, 4-FCBGA

HUFA76429D3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NVMYS011N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

7.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LFPAK

Package / Case

SOT-1023, 4-LFPAK

NTK3134NT5H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723

IPT004N03LATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

300A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.4mOhm @ 150A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

163nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24000pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOF-8-1

Package / Case

8-PowerSFN

Recently Sold

XA7Z020-1CLG484Q

XA7Z020-1CLG484Q

Xilinx

IC SOC CORTEX-A9 667MHZ 484BGA

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

DSC1001DL5-024.0000

DSC1001DL5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

LTC3854EMSE#PBF

LTC3854EMSE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 12MSOP

LTC3418EUHF#PBF

LTC3418EUHF#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 8A 38QFN

ESD5B5.0ST1G

ESD5B5.0ST1G

ON Semiconductor

TVS DIODE 5V SOD523

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP

74F175SCX

74F175SCX

ON Semiconductor

IC FF D-TYPE SNGL 4BIT 16SOIC

ADM3310EACPZ

ADM3310EACPZ

Analog Devices

IC TRANSCEIVER FULL 3/5 32LFCSP

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

MAX1619MEE+T

MAX1619MEE+T

Maxim Integrated

SENSOR DIGITAL -55C-125C 16QSOP

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC