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IXTM11N80

IXTM11N80

For Reference Only

Part Number IXTM11N80
PNEDA Part # IXTM11N80
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTM11N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTM11N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTM11N80 Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AA
Package / CaseTO-204AA, TO-3

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