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IXTM50N20

IXTM50N20

For Reference Only

Part Number IXTM50N20
PNEDA Part # IXTM50N20
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,092
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTM50N20 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTM50N20
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTM50N20, IXTM50N20 Datasheet (Total Pages: 4, Size: 618.59 KB)
PDFIXTM50N20 Datasheet Cover
IXTM50N20 Datasheet Page 2 IXTM50N20 Datasheet Page 3 IXTM50N20 Datasheet Page 4

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IXTM50N20 Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AE
Package / CaseTO-204AE

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