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IXTM5N100

IXTM5N100

For Reference Only

Part Number IXTM5N100
PNEDA Part # IXTM5N100
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,984
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTM5N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTM5N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTM5N100, IXTM5N100 Datasheet (Total Pages: 4, Size: 612.16 KB)
PDFIXTM5N100A Datasheet Cover
IXTM5N100A Datasheet Page 2 IXTM5N100A Datasheet Page 3 IXTM5N100A Datasheet Page 4

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IXTM5N100 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AA
Package / CaseTO-204AA, TO-3

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