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IXTN21N100

IXTN21N100

For Reference Only

Part Number IXTN21N100
PNEDA Part # IXTN21N100
Description MOSFET N-CH 1KV 21A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN21N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN21N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN21N100, IXTN21N100 Datasheet (Total Pages: 4, Size: 137.17 KB)
PDFIXTN21N100 Datasheet Cover
IXTN21N100 Datasheet Page 2 IXTN21N100 Datasheet Page 3 IXTN21N100 Datasheet Page 4

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IXTN21N100 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8400pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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