Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTN320N10T

IXTN320N10T

For Reference Only

Part Number IXTN320N10T
PNEDA Part # IXTN320N10T
Description MOSFET N-CH 100V 320A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 30 - Jul 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN320N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN320N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN320N10T, IXTN320N10T Datasheet (Total Pages: 5, Size: 162.77 KB)
PDFIXTN320N10T Datasheet Cover
IXTN320N10T Datasheet Page 2 IXTN320N10T Datasheet Page 3 IXTN320N10T Datasheet Page 4 IXTN320N10T Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTN320N10T Datasheet
  • where to find IXTN320N10T
  • IXYS

  • IXYS IXTN320N10T
  • IXTN320N10T PDF Datasheet
  • IXTN320N10T Stock

  • IXTN320N10T Pinout
  • Datasheet IXTN320N10T
  • IXTN320N10T Supplier

  • IXYS Distributor
  • IXTN320N10T Price
  • IXTN320N10T Distributor

IXTN320N10T Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)680W (Tc)
Operating Temperature-
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

UPA2631T1R-E2-AX

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

62mOhm @ 3A, 1.8V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

12.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-HUSON (2x2)

Package / Case

6-PowerWDFN

SI5432DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 8.3A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 6.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

STF100N10F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4369pF @ 50V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

AOI538

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaMOS

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

34A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2160pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.2W (Ta), 24W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak

HUF76419S3ST-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28.5nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

ISL3259EIBZ-T

ISL3259EIBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8SOIC

LT1129IQ#PBF

LT1129IQ#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 700MA 5DDPAK

LT3045EDD#PBF

LT3045EDD#PBF

Linear Technology/Analog Devices

IC REG LINEAR 0V 500MA 10DFN

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

HLMP-1301-E00A2

HLMP-1301-E00A2

Broadcom

LED 3MM GAP DIFF RED RA HOUSING

MT29F16G08ABACAWP-ITZ:C

MT29F16G08ABACAWP-ITZ:C

Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

AD1580ART-REEL

AD1580ART-REEL

Analog Devices

IC VREF SHUNT 1.225V SOT23

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

EP53A8HQI

EP53A8HQI

Enpirion

DC DC CONVERTER 1.8-3.3V 3W

MAX3045BEUE+

MAX3045BEUE+

Maxim Integrated

IC DRIVER 4/0 16TSSOP

FT230XS-U

FT230XS-U

FTDI, Future Technology Devices International Ltd

IC USB SERIAL BASIC UART 16SSOP

MX25L25645GMI-10G

MX25L25645GMI-10G

Macronix

IC FLASH 256MBIT