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IXTN550N055T2

IXTN550N055T2

For Reference Only

Part Number IXTN550N055T2
PNEDA Part # IXTN550N055T2
Description MOSFET N-CH 55V 550A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN550N055T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN550N055T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN550N055T2, IXTN550N055T2 Datasheet (Total Pages: 6, Size: 178.44 KB)
PDFIXTN550N055T2 Datasheet Cover
IXTN550N055T2 Datasheet Page 2 IXTN550N055T2 Datasheet Page 3 IXTN550N055T2 Datasheet Page 4 IXTN550N055T2 Datasheet Page 5 IXTN550N055T2 Datasheet Page 6

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IXTN550N055T2 Specifications

ManufacturerIXYS
SeriesGigaMOS™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C550A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs595nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds40000pF @ 25V
FET Feature-
Power Dissipation (Max)940W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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