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IXTP08N50D2

IXTP08N50D2

For Reference Only

Part Number IXTP08N50D2
PNEDA Part # IXTP08N50D2
Description MOSFET N-CH 500V 800MA TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP08N50D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP08N50D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP08N50D2, IXTP08N50D2 Datasheet (Total Pages: 5, Size: 177.75 KB)
PDFIXTA08N50D2 Datasheet Cover
IXTA08N50D2 Datasheet Page 2 IXTA08N50D2 Datasheet Page 3 IXTA08N50D2 Datasheet Page 4 IXTA08N50D2 Datasheet Page 5

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IXTP08N50D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs4.6Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs12.7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds312pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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