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IXTP110N055P

IXTP110N055P

For Reference Only

Part Number IXTP110N055P
PNEDA Part # IXTP110N055P
Description MOSFET N-CH 55V 110A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP110N055P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP110N055P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP110N055P, IXTP110N055P Datasheet (Total Pages: 5, Size: 254.77 KB)
PDFIXTQ110N055P Datasheet Cover
IXTQ110N055P Datasheet Page 2 IXTQ110N055P Datasheet Page 3 IXTQ110N055P Datasheet Page 4 IXTQ110N055P Datasheet Page 5

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IXTP110N055P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2210pF @ 25V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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