Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTP110N055T

IXTP110N055T

For Reference Only

Part Number IXTP110N055T
PNEDA Part # IXTP110N055T
Description MOSFET N-CH 55V 110A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP110N055T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP110N055T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP110N055T, IXTP110N055T Datasheet (Total Pages: 5, Size: 216.38 KB)
PDFIXTA110N055T Datasheet Cover
IXTA110N055T Datasheet Page 2 IXTA110N055T Datasheet Page 3 IXTA110N055T Datasheet Page 4 IXTA110N055T Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTP110N055T Datasheet
  • where to find IXTP110N055T
  • IXYS

  • IXYS IXTP110N055T
  • IXTP110N055T PDF Datasheet
  • IXTP110N055T Stock

  • IXTP110N055T Pinout
  • Datasheet IXTP110N055T
  • IXTP110N055T Supplier

  • IXYS Distributor
  • IXTP110N055T Price
  • IXTP110N055T Distributor

IXTP110N055T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3080pF @ 25V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

2N7002_NB9G002

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23 (TO-236AB)

Package / Case

TO-236-3, SC-59, SOT-23-3

TSM480P06CZ C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

48mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 30V

FET Feature

-

Power Dissipation (Max)

66W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

37.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

53.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (6x5)

Package / Case

8-VDFN Exposed Pad

BSS126H6327XTSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

NTMS4807NR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.1mOhm @ 14.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 24V

FET Feature

-

Power Dissipation (Max)

860mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

MT25QL256ABA8ESF-0SIT

MT25QL256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

NC7WZ00K8X

NC7WZ00K8X

ON Semiconductor

IC GATE NAND 2CH 2-INP US8

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

LTC3854EMSE#PBF

LTC3854EMSE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 12MSOP

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

ICE3BR0665J

ICE3BR0665J

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

ADP5054ACPZ-R7

ADP5054ACPZ-R7

Analog Devices

IC REG CTRLR BUCK 48LFCSP

MLX90614ESF-DCI-000-SP

MLX90614ESF-DCI-000-SP

Melexis Technologies NV

SENSOR DGTL -40C-85C TO39

TN2124K1-G

TN2124K1-G

Microchip Technology

MOSFET N-CH 240V 0.134A SOT23-3

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

TLP350H(F)

TLP350H(F)

Toshiba Semiconductor and Storage

X36 PB-F PHOTOCOUPLER THRU HOLE