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IXTP20N65XM

IXTP20N65XM

For Reference Only

Part Number IXTP20N65XM
PNEDA Part # IXTP20N65XM
Description MOSFET N-CH 650V 9A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP20N65XM Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP20N65XM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTP20N65XM Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1390pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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