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IXTP24P085T

IXTP24P085T

For Reference Only

Part Number IXTP24P085T
PNEDA Part # IXTP24P085T
Description MOSFET P-CH 85V 24A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,552
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP24P085T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP24P085T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP24P085T, IXTP24P085T Datasheet (Total Pages: 6, Size: 197.88 KB)
PDFIXTA24P085T Datasheet Cover
IXTA24P085T Datasheet Page 2 IXTA24P085T Datasheet Page 3 IXTA24P085T Datasheet Page 4 IXTA24P085T Datasheet Page 5 IXTA24P085T Datasheet Page 6

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IXTP24P085T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds2090pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Rds On (Max) @ Id, Vgs

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

3.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Drain to Source Voltage (Vdss)

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Gate Charge (Qg) (Max) @ Vgs

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