Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTP6N50D2

IXTP6N50D2

For Reference Only

Part Number IXTP6N50D2
PNEDA Part # IXTP6N50D2
Description MOSFET N-CH 500V 6A TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP6N50D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP6N50D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP6N50D2, IXTP6N50D2 Datasheet (Total Pages: 5, Size: 186.2 KB)
PDFIXTH6N50D2 Datasheet Cover
IXTH6N50D2 Datasheet Page 2 IXTH6N50D2 Datasheet Page 3 IXTH6N50D2 Datasheet Page 4 IXTH6N50D2 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTP6N50D2 Datasheet
  • where to find IXTP6N50D2
  • IXYS

  • IXYS IXTP6N50D2
  • IXTP6N50D2 PDF Datasheet
  • IXTP6N50D2 Stock

  • IXTP6N50D2 Pinout
  • Datasheet IXTP6N50D2
  • IXTP6N50D2 Supplier

  • IXYS Distributor
  • IXTP6N50D2 Price
  • IXTP6N50D2 Distributor

IXTP6N50D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs500mOhm @ 3A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs96nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

FDA8440

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

450nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24740pF @ 25V

FET Feature

-

Power Dissipation (Max)

306W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

STB55NF03LT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NTHD5904NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 3.3A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

465pF @ 16V

FET Feature

-

Power Dissipation (Max)

640mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ChipFET™

Package / Case

8-SMD, Flat Lead

IRFZ48R

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRL2203NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

116A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3290pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

1N4007G

1N4007G

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

HCM0703-4R7-R

HCM0703-4R7-R

Eaton - Electronics Division

FIXED IND 4.7UH 5.5A 40 MOHM SMD

NC7SZ08P5X

NC7SZ08P5X

ON Semiconductor

IC GATE AND 1CH 2-INP SC70-5

NP5Q128A13ESFC0E

NP5Q128A13ESFC0E

Micron Technology Inc.

IC PCM 128M SPI 66MHZ 16SO W

MCIMX6G1CVM05AA

MCIMX6G1CVM05AA

NXP

IC MPU I.MC6UL 528MHZ 289BGA

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

SBR05U20LPS-7

SBR05U20LPS-7

Diodes Incorporated

DIODE SBR 20V 500MA 2DFN

YC324-JK-072KL

YC324-JK-072KL

Yageo

RES ARRAY 4 RES 2K OHM 2012

SP3232EEN-L/TR

SP3232EEN-L/TR

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

4608X-101-153LF

4608X-101-153LF

Bourns

RES ARRAY 7 RES 15K OHM 8SIP

TEMT1020

TEMT1020

Vishay Semiconductor Opto Division

SENSOR PHOTO 880NM TOP VIEW 2SMD