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IXTP6N50P

IXTP6N50P

For Reference Only

Part Number IXTP6N50P
PNEDA Part # IXTP6N50P
Description MOSFET N-CH 500V 6A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP6N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP6N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP6N50P, IXTP6N50P Datasheet (Total Pages: 5, Size: 812.15 KB)
PDFIXTA6N50P Datasheet Cover
IXTA6N50P Datasheet Page 2 IXTA6N50P Datasheet Page 3 IXTA6N50P Datasheet Page 4 IXTA6N50P Datasheet Page 5

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IXTP6N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs14.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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