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IXTP7N60P

IXTP7N60P

For Reference Only

Part Number IXTP7N60P
PNEDA Part # IXTP7N60P
Description MOSFET N-CH 600V 7A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,078
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP7N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP7N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP7N60P, IXTP7N60P Datasheet (Total Pages: 4, Size: 759.03 KB)
PDFIXTP7N60P Datasheet Cover
IXTP7N60P Datasheet Page 2 IXTP7N60P Datasheet Page 3 IXTP7N60P Datasheet Page 4

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IXTP7N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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