Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTP80N075L2

IXTP80N075L2

For Reference Only

Part Number IXTP80N075L2
PNEDA Part # IXTP80N075L2
Description MOSFET N-CH 75V 80A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP80N075L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP80N075L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP80N075L2, IXTP80N075L2 Datasheet (Total Pages: 6, Size: 169 KB)
PDFIXTH80N075L2 Datasheet Cover
IXTH80N075L2 Datasheet Page 2 IXTH80N075L2 Datasheet Page 3 IXTH80N075L2 Datasheet Page 4 IXTH80N075L2 Datasheet Page 5 IXTH80N075L2 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTP80N075L2 Datasheet
  • where to find IXTP80N075L2
  • IXYS

  • IXYS IXTP80N075L2
  • IXTP80N075L2 PDF Datasheet
  • IXTP80N075L2 Stock

  • IXTP80N075L2 Pinout
  • Datasheet IXTP80N075L2
  • IXTP80N075L2 Supplier

  • IXYS Distributor
  • IXTP80N075L2 Price
  • IXTP80N075L2 Distributor

IXTP80N075L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs103nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

NTTFS4H07NTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

18.5A (Ta), 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

771pF @ 12V

FET Feature

-

Power Dissipation (Max)

2.64W (Ta), 33.8W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

APTM10UM01FAG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

860A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 275A, 10V

Vgs(th) (Max) @ Id

4V @ 12mA

Gate Charge (Qg) (Max) @ Vgs

2100nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

60000pF @ 25V

FET Feature

-

Power Dissipation (Max)

2500W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP6

Package / Case

SP6

NDT452P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

180mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

525pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

IPI120N08S404AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6450pF @ 25V

FET Feature

-

Power Dissipation (Max)

179W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

APT20F50S

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

B3U-1000P

B3U-1000P

Omron Electronics Inc-EMC Div

SWITCH TACTILE SPST-NO 0.05A 12V

MMBT2907ALT1G

MMBT2907ALT1G

ON Semiconductor

TRANS PNP 60V 0.6A SOT23

TAJC107M016RNJ

TAJC107M016RNJ

CAP TANT 100UF 20% 16V 2312

LQW2BHN22NJ03L

LQW2BHN22NJ03L

Murata

FIXED IND 22NH 720MA 90 MOHM SMD

TMP36GT9Z

TMP36GT9Z

Analog Devices

SENSOR ANALOG -40C-125C TO92-3

IRF9Z24NPBF

IRF9Z24NPBF

Infineon Technologies

MOSFET P-CH 55V 12A TO-220AB

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

SS36FA

SS36FA

ON Semiconductor

DIODE SCHOTTKY 60V 3A SOD123FA

24LC01BT-I/OT

24LC01BT-I/OT

Microchip Technology

IC EEPROM 1K I2C 400KHZ SOT23-5

D45VH10G

D45VH10G

ON Semiconductor

TRANS PNP 80V 15A TO220AB

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402