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IXTP8N50PM

IXTP8N50PM

For Reference Only

Part Number IXTP8N50PM
PNEDA Part # IXTP8N50PM
Description MOSFET N-CH 500V 4A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 28 - Jun 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP8N50PM Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP8N50PM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP8N50PM, IXTP8N50PM Datasheet (Total Pages: 2, Size: 649.72 KB)
PDFIXTP8N50PM Datasheet Cover
IXTP8N50PM Datasheet Page 2

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IXTP8N50PM Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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