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IXTQ100N25P

IXTQ100N25P

For Reference Only

Part Number IXTQ100N25P
PNEDA Part # IXTQ100N25P
Description MOSFET N-CH 250V 100A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ100N25P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ100N25P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ100N25P, IXTQ100N25P Datasheet (Total Pages: 5, Size: 274.48 KB)
PDFIXTT100N25P Datasheet Cover
IXTT100N25P Datasheet Page 2 IXTT100N25P Datasheet Page 3 IXTT100N25P Datasheet Page 4 IXTT100N25P Datasheet Page 5

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IXTQ100N25P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6300pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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