Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTQ102N15T

IXTQ102N15T

For Reference Only

Part Number IXTQ102N15T
PNEDA Part # IXTQ102N15T
Description MOSFET N-CH 150V 102A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,382
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ102N15T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ102N15T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ102N15T, IXTQ102N15T Datasheet (Total Pages: 7, Size: 233.92 KB)
PDFIXTQ102N15T Datasheet Cover
IXTQ102N15T Datasheet Page 2 IXTQ102N15T Datasheet Page 3 IXTQ102N15T Datasheet Page 4 IXTQ102N15T Datasheet Page 5 IXTQ102N15T Datasheet Page 6 IXTQ102N15T Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTQ102N15T Datasheet
  • where to find IXTQ102N15T
  • IXYS

  • IXYS IXTQ102N15T
  • IXTQ102N15T PDF Datasheet
  • IXTQ102N15T Stock

  • IXTQ102N15T Pinout
  • Datasheet IXTQ102N15T
  • IXTQ102N15T Supplier

  • IXYS Distributor
  • IXTQ102N15T Price
  • IXTQ102N15T Distributor

IXTQ102N15T Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5220pF @ 25V
FET Feature-
Power Dissipation (Max)455W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

FQP5N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 2.4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IPW60R165CPFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 100V

FET Feature

-

Power Dissipation (Max)

192W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

SFT1345-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

275mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TP-FA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RD3P050SNFRATL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

190mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

FET Feature

-

Power Dissipation (Max)

15W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SPP80N06S2-09

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 125µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3140pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

MMSZ7V5T1G

MMSZ7V5T1G

ON Semiconductor

DIODE ZENER 7.5V 500MW SOD123

BAT54CXV3T1G

BAT54CXV3T1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SC89-3

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP

ATXMEGA16A4U-AU

ATXMEGA16A4U-AU

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

AON6266

AON6266

Alpha & Omega Semiconductor

MOSFET N-CH 60V 13A 8DFN

PS2805-1-A

PS2805-1-A

CEL

OPTOISOLATOR 2.5KV TRANS 4SOIC

BAT54A-7-F

BAT54A-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO

STD03N

STD03N

Sanken

TRANS NPN DARL 160V 15A TO-3P-5

BZX84C3V3LT1G

BZX84C3V3LT1G

ON Semiconductor

DIODE ZENER 3.3V 225MW SOT23-3

H5007

H5007

Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

BC817-16

BC817-16

Diodes Incorporated

TRANS NPN 45V 0.8A SOT23-3