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IXTQ16N50P

IXTQ16N50P

For Reference Only

Part Number IXTQ16N50P
PNEDA Part # IXTQ16N50P
Description MOSFET N-CH 500V 16A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,286
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ16N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ16N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ16N50P, IXTQ16N50P Datasheet (Total Pages: 4, Size: 143.25 KB)
PDFIXTQ16N50P Datasheet Cover
IXTQ16N50P Datasheet Page 2 IXTQ16N50P Datasheet Page 3 IXTQ16N50P Datasheet Page 4

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IXTQ16N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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