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IXTQ170N10P

IXTQ170N10P

For Reference Only

Part Number IXTQ170N10P
PNEDA Part # IXTQ170N10P
Description MOSFET N-CH 100V 170A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ170N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ170N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ170N10P, IXTQ170N10P Datasheet (Total Pages: 5, Size: 164.68 KB)
PDFIXTT170N10P Datasheet Cover
IXTT170N10P Datasheet Page 2 IXTT170N10P Datasheet Page 3 IXTT170N10P Datasheet Page 4 IXTT170N10P Datasheet Page 5

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IXTQ170N10P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs198nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)715W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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