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IXTQ180N085T

IXTQ180N085T

For Reference Only

Part Number IXTQ180N085T
PNEDA Part # IXTQ180N085T
Description MOSFET N-CH 85V 180A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ180N085T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ180N085T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ180N085T, IXTQ180N085T Datasheet (Total Pages: 5, Size: 203.76 KB)
PDFIXTQ180N085T Datasheet Cover
IXTQ180N085T Datasheet Page 2 IXTQ180N085T Datasheet Page 3 IXTQ180N085T Datasheet Page 4 IXTQ180N085T Datasheet Page 5

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IXTQ180N085T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
FET Feature-
Power Dissipation (Max)430W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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