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IXTQ36P15P

IXTQ36P15P

For Reference Only

Part Number IXTQ36P15P
PNEDA Part # IXTQ36P15P
Description MOSFET P-CH 150V 36A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ36P15P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ36P15P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ36P15P, IXTQ36P15P Datasheet (Total Pages: 6, Size: 174.81 KB)
PDFIXTH36P15P Datasheet Cover
IXTH36P15P Datasheet Page 2 IXTH36P15P Datasheet Page 3 IXTH36P15P Datasheet Page 4 IXTH36P15P Datasheet Page 5 IXTH36P15P Datasheet Page 6

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IXTQ36P15P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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