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IXTQ52P10P

IXTQ52P10P

For Reference Only

Part Number IXTQ52P10P
PNEDA Part # IXTQ52P10P
Description MOSFET P-CH 100V 52A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 16,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ52P10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ52P10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ52P10P, IXTQ52P10P Datasheet (Total Pages: 6, Size: 182.03 KB)
PDFIXTH52P10P Datasheet Cover
IXTH52P10P Datasheet Page 2 IXTH52P10P Datasheet Page 3 IXTH52P10P Datasheet Page 4 IXTH52P10P Datasheet Page 5 IXTH52P10P Datasheet Page 6

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IXTQ52P10P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2845pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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