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IXTQ96N20P

IXTQ96N20P

For Reference Only

Part Number IXTQ96N20P
PNEDA Part # IXTQ96N20P
Description MOSFET N-CH 200V 96A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ96N20P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ96N20P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ96N20P, IXTQ96N20P Datasheet (Total Pages: 5, Size: 198.36 KB)
PDFIXTT96N20P Datasheet Cover
IXTT96N20P Datasheet Page 2 IXTT96N20P Datasheet Page 3 IXTT96N20P Datasheet Page 4 IXTT96N20P Datasheet Page 5

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IXTQ96N20P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs145nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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