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IXTR32P60P

IXTR32P60P

For Reference Only

Part Number IXTR32P60P
PNEDA Part # IXTR32P60P
Description MOSFET P-CH 600V 18A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTR32P60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTR32P60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTR32P60P, IXTR32P60P Datasheet (Total Pages: 5, Size: 118.29 KB)
PDFIXTR32P60P Datasheet Cover
IXTR32P60P Datasheet Page 2 IXTR32P60P Datasheet Page 3 IXTR32P60P Datasheet Page 4 IXTR32P60P Datasheet Page 5

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IXTR32P60P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs385mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs196nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11100pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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