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IXTT1N100

IXTT1N100

For Reference Only

Part Number IXTT1N100
PNEDA Part # IXTT1N100
Description MOSFET N-CH 1000V 1.5A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,938
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT1N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT1N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT1N100, IXTT1N100 Datasheet (Total Pages: 2, Size: 73.23 KB)
PDFIXTT1N100 Datasheet Cover
IXTT1N100 Datasheet Page 2

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IXTT1N100 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 25V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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