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IXTT60N20L2

IXTT60N20L2

For Reference Only

Part Number IXTT60N20L2
PNEDA Part # IXTT60N20L2
Description MOSFET N-CH 200V 60A TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,252
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT60N20L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT60N20L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT60N20L2, IXTT60N20L2 Datasheet (Total Pages: 5, Size: 149.47 KB)
PDFIXTH60N20L2 Datasheet Cover
IXTH60N20L2 Datasheet Page 2 IXTH60N20L2 Datasheet Page 3 IXTH60N20L2 Datasheet Page 4 IXTH60N20L2 Datasheet Page 5

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IXTT60N20L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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