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IXTT75N10L2

IXTT75N10L2

For Reference Only

Part Number IXTT75N10L2
PNEDA Part # IXTT75N10L2
Description MOSFET N-CH 100V 75A TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT75N10L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT75N10L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT75N10L2, IXTT75N10L2 Datasheet (Total Pages: 5, Size: 139.8 KB)
PDFIXTT75N10L2 Datasheet Cover
IXTT75N10L2 Datasheet Page 2 IXTT75N10L2 Datasheet Page 3 IXTT75N10L2 Datasheet Page 4 IXTT75N10L2 Datasheet Page 5

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IXTT75N10L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs21mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs215nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8100pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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