IXTU01N100
For Reference Only
| Part Number | IXTU01N100 |
| PNEDA Part # | IXTU01N100 |
| Description | MOSFET N-CH 1KV .1A I-PAK |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,392 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXTU01N100 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXTU01N100 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IXTU01N100 Specifications
| Manufacturer | IXYS |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.9nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 54pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 88W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
