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IXTU08N100P

IXTU08N100P

For Reference Only

Part Number IXTU08N100P
PNEDA Part # IXTU08N100P
Description MOSFET N-CH 1000V 8A TO-251
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,354
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTU08N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTU08N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTU08N100P Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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