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IXTU2N80P

IXTU2N80P

For Reference Only

Part Number IXTU2N80P
PNEDA Part # IXTU2N80P
Description MOSFET N-CH TO-251
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTU2N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTU2N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTU2N80P, IXTU2N80P Datasheet (Total Pages: 5, Size: 888.15 KB)
PDFIXTU2N80P Datasheet Cover
IXTU2N80P Datasheet Page 2 IXTU2N80P Datasheet Page 3 IXTU2N80P Datasheet Page 4 IXTU2N80P Datasheet Page 5

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IXTU2N80P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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