Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTV22N60P

IXTV22N60P

For Reference Only

Part Number IXTV22N60P
PNEDA Part # IXTV22N60P
Description MOSFET N-CH 600V 22A PLUS220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTV22N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTV22N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTV22N60P, IXTV22N60P Datasheet (Total Pages: 5, Size: 314.66 KB)
PDFIXTV22N60PS Datasheet Cover
IXTV22N60PS Datasheet Page 2 IXTV22N60PS Datasheet Page 3 IXTV22N60PS Datasheet Page 4 IXTV22N60PS Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTV22N60P Datasheet
  • where to find IXTV22N60P
  • IXYS

  • IXYS IXTV22N60P
  • IXTV22N60P PDF Datasheet
  • IXTV22N60P Stock

  • IXTV22N60P Pinout
  • Datasheet IXTV22N60P
  • IXTV22N60P Supplier

  • IXYS Distributor
  • IXTV22N60P Price
  • IXTV22N60P Distributor

IXTV22N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS220
Package / CaseTO-220-3, Short Tab

The Products You May Be Interested In

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

Temperature Sensing Diode

Power Dissipation (Max)

272W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-5

Package / Case

TO-220-5

STP3LN80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.25Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

2.63nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

102pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

DMTH6010SCT

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1940pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

BSP135H6906XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

120mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

45Ohm @ 120mA, 10V

Vgs(th) (Max) @ Id

1V @ 94µA

Gate Charge (Qg) (Max) @ Vgs

4.9nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

146pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

GP2M005A050CG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 25V

FET Feature

-

Power Dissipation (Max)

98.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LTC4416IMS-1#PBF

LTC4416IMS-1#PBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 10MSOP

2920L150DR

2920L150DR

Littelfuse

PTC RESET FUSE 33V 1.5A 2920

MCP1725T-3302E/MC

MCP1725T-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

20IMX35D12D12-8G

20IMX35D12D12-8G

Bel Power Solutions

DC DC CONVERTER 12V 12V 12V 35W

MT41J128M16JT-093:K

MT41J128M16JT-093:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

STM809MWX6F

STM809MWX6F

STMicroelectronics

IC MPU RESET CIRC 4.38V SOT23

DLW5BTN501SQ2L

DLW5BTN501SQ2L

Murata

CMC 4A 2LN 500 OHM SMD

TS4984IQT

TS4984IQT

STMicroelectronics

IC AMP AUDIO PWR 1.2W AB 16TQFN

ADP5052ACPZ-R7

ADP5052ACPZ-R7

Analog Devices

IC REG 5OUT BCK/LNR SYNC 48LFCSP

MAX3387EEUG+T

MAX3387EEUG+T

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP