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IXTX200N10L2

IXTX200N10L2

For Reference Only

Part Number IXTX200N10L2
PNEDA Part # IXTX200N10L2
Description MOSFET N-CH 100V 200A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,754
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTX200N10L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTX200N10L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTX200N10L2, IXTX200N10L2 Datasheet (Total Pages: 5, Size: 133.8 KB)
PDFIXTX200N10L2 Datasheet Cover
IXTX200N10L2 Datasheet Page 2 IXTX200N10L2 Datasheet Page 3 IXTX200N10L2 Datasheet Page 4 IXTX200N10L2 Datasheet Page 5

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IXTX200N10L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs540nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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