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IXTX4N300P3HV

IXTX4N300P3HV

For Reference Only

Part Number IXTX4N300P3HV
PNEDA Part # IXTX4N300P3HV
Description 2000V TO 3000V POLAR3 POWER MOSF
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,224
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTX4N300P3HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTX4N300P3HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTX4N300P3HV, IXTX4N300P3HV Datasheet (Total Pages: 5, Size: 176.56 KB)
PDFIXTX4N300P3HV Datasheet Cover
IXTX4N300P3HV Datasheet Page 2 IXTX4N300P3HV Datasheet Page 3 IXTX4N300P3HV Datasheet Page 4 IXTX4N300P3HV Datasheet Page 5

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IXTX4N300P3HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)3000V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs139nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3680pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247PLUS-HV
Package / CaseTO-247-3 Variant

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